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| GM8550 Description Package Dimensions 1/2 P N P E P I TA X I A L T R A N S I S T O R The GM8550 is designed for use in 1W output amplifier of portable radios in class B push-pull operation. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 1.50 1.30 2.40 0.89 4.25 1.70 1.50 2.60 1.20 G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 1.40 0.35 0.52 1.60 0.41 5 q TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Total Power Dissipation Symbol Tj Tstg BVCBO BVCEO BVEBO IC IB PD Ratings +150 -55 ~ +150 -40 -25 -6 -1.5 -0.5 1 V V V A A W Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hfe1 hfe2 hfe3 fT at Ta = 25 : Min. -40 -25 -6 45 120 40 100 Typ. Max. -100 -100 -0.5 -1.2 -1 500 MHz Unit V V V nA nA V V V IC=-100uA IC=-2mA IE=-100uA VCB=-35V VEB=-6V IC=-0.8A, IB=-80mA IC=-0.8A, IB=-80mA VCE=-1V, IC=-10mA VCE=-1V, IC=-5mA VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA VCE=-10V, IC=-20mA, f=100MHz Test Conditions Classification Of hFE Rank hFE C 120 - 200 D 160 - 300 E 250 - 500 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX :86- 21-38950165 |
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